Diodes DMP2240UW - Manual (Page 2)

DMP2240UW
Document number: DS31372 Rev. 3 - 2
2 of 5
www.diodes.com
May 2010
© Diodes Incorporated
DMP2240UW
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV
DSS
-20 ⎯ ⎯ V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current T
J
= 25
°C
T
J
= 125
°C
I
DSS
⎯ ⎯
-1.0
-5.0
μA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100
nA V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(th)
-0.45 ⎯ -1.0 V V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance R DS (ON)
⎯
92
134
180
150
200
240
m Ω
V
GS
= -4.5V, I
D
= -2.0A
V GS = -2.5V, I D = -1.5A
V
GS
= -1.8V, I
D
= -0.5A
Forward Transconductance g
FS
⎯ 3.1 ⎯ S V
DS
= -10V, I
D
= -810mA
Diode Forward Voltage (Note 4) V SD
⎯ ⎯ -0.9 V V GS = 0V, I S = -0.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ 320 ⎯ pF
V DS = -16V, V GS = 0V
f = 1.0MHz
Output Capacitance C oss
⎯ 80 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 60 ⎯ pF
Turn-On Delay Time t
D(on)
⎯ 12.5 ⎯ ns
V
DS
= -10V, V
GS
= -4.5V,
R
L
= 10 Ω, R
G
= 1.0 Ω
Turn-On Rise Time t r
⎯ 10.3 ⎯ ns
Turn-Off Delay Time t
D(off)
⎯ 46.5 ⎯ ns
Turn-Off Fall Time t
f
⎯ 22.2 ⎯ ns
Notes: 4. Short duration pulse test used to minimize self-heating effect.
V = -3.0V
GS
V = -2.0V
GS
V = -1.8V
GS
V = -1.6V
GS
V = -1.4V
GS
V = -1.2V
GS
V = -1.0V
GS
V = -10V
DS
T = 125°C
A
T = 25°C
A
T = -55°C
A