Diodes DMP2240UW User Manual
Dmp2240uw, Features, Mechanical data
DMP2240UW
Document number: DS31372 Rev. 3 - 2
1 of 5
May 2010
© Diodes Incorporated
DMP2240UW
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• P-Channel
MOSFET
• Low
On-Resistance
• 150
m
Ω @ V
GS
= -4.5V
• 200
m
Ω @ V
GS
= -2.5V
• 240
m
Ω @ V
GS
= -1.8V
•
Very Low Gate Threshold Voltage V
GS(th)
≤ 1V
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Lead Free By Design/RoHS Compliant (Note 2)
•
"Green" Device (Note 3)
•
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case:
SOT-323
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals Connections: See Diagram Below
• Terminals:
Finish
⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 4
•
Ordering Information: See Page 4
•
Weight: 0.006 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±12 V
Drain Current (Note 1)
T
A
= 25
°C
T
A
= 70
°C
I
D
-1.5
-1.0
A
Pulsed Drain Current
I
DM
-5 A
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 1)
P
D
250 mW
Thermal Resistance, Junction to Ambient
R
θJA
500 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Notes:
1. Device mounted on FR-4 substrate PC board, 2oz. Copper, with minimum recommended pad layout.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at
SOT-323
Top View
Top View
Internal Schematic
Source
Gate
Drain
G
S
D