Diodes DMP2160UW - Manual (Page 2)

DMP2160UW
Document number: DS31521 Rev. 5 - 2
2 of 5
www.diodes.com
February 2013
© Diodes Incorporated
NEW PROD
UC
T
DMP2160UW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V
GSS
±12 V
Drain Current (Note 5)
T
A
= +25°C
T
A
= +70°C
I
D
-1.5
-1.2
A
Pulsed Drain Current I
DM
-10 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
350 mW
Thermal Resistance, Junction to Ambient R
θJA
360 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-20 — — V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — -1.0 µA V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
—
— —
— ±100
±800
nA
V
GS
= ±8V, V
DS
= 0V
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.4 -0.6 -0.9 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS(ON)
—
75
90
120
100
120
160
mΩ
V
GS
= -4.5V, I
D
= -1.5A
V
GS
= -2.5V, I
D
= -1.2A
V
GS
= -1.8V, I
D
= -1A
Forward Transconductance g
FS
— 4 — S V
DS
= -10V, I
D
= -1.5A
Diode Forward Voltage (Note 6) V
SD
— — -1.0 V V
GS
= 0V, I
S
= -1.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— 627 — pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
— 64 — pF
Reverse Transfer Capacitance C
rss
— 53 — pF
Notes: 5. Device mounted on 1in 2 FR-4 PCB with 2 oz. Copper. t ≤ 10 sec.
6. Short duration pulse test used to minimize self-heating effect.