Diodes DMP2130LDM - Manual (Page 2)

DMP2130LDM
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
-20 ⎯ ⎯ V I
D
= -250
μA, V
GS
= 0V
I DSS
⎯ ⎯ -1 μA
V DS = -20V, V GS = 0V Zero Gate Voltage Drain Current T J = 25
°C
Gate-Body Leakage Current I
GSS
⎯ ⎯ ±100 nA V
DS
= 0V, V
GS
= ±12V
Gate Threshold Voltage V
GS(th)
-0.6 ⎯ -1.25 V V
DS
= V
GS
, I
D
= -250 μA
NEW PRODUCT
On State Drain Current (Note 5) I
D (ON)
-15 ⎯ ⎯ A V
GS
= -4.5V, V
DS
= -5V
R
DS (ON)
⎯
51
82
94 80
110
130 m Ω
V
GS
= -4.5V, I
D
= -4.5A
V
GS
= -2.7V, I
D
= -3.8A
V GS = -2.5V, I D = -3.7A
Static Drain-Source On-Resistance (Note 5)
Forward Transconductance (Note 5) g
FS
⎯ 6.3 ⎯ S V
DS
= -10V, I
D
= -4.5A
Diode Forward Voltage (Note 5) V
SD
⎯ 0.79 -1.26 V I
S
= -1.7A, V
GS
= 0V
Maximum Body-Diode Continuous Current (Note 1) I
S
⎯ ⎯ 1.7 A ⎯
DYNAMIC PARAMETERS (Note 6)
Total Gate Charge
Q g
⎯ 7.3 ⎯ nC V GS = -4.5V, V DS = -10V, I D = 4.5A
Gate-Source Charge Q
gs
⎯ 2.0 ⎯ nC V
GS
= -4.5V, V
DS
= -10V, I
D
= 4.5A
Gate-Drain Charge Q
gd
⎯ 1.9 ⎯ nC V
GS
= -4.5V, V
DS
= -10V, I
D
= 4.5A
Turn-On Delay Time t
D(on)
⎯ 12 ⎯ ns
Turn-On Rise Time t
r
⎯ 20 ⎯ ns
DMP2130LDM
Document number: DS31118 Rev. 6 - 2
2 of 4
www.diodes.com
May 2008
© Diodes Incorporated
Turn-Off Delay Time t
D(off)
⎯ 38 ⎯ ns
t
f
⎯ 41 ⎯ ns
V
DS
= -10V, V
GS
= -4.5V,
R
L
= 10 Ω, R
G
= 6 Ω
Turn-Off Fall Time
Input Capacitance
C
iss
⎯ 443 ⎯ pF
Output Capacitance C
oss
⎯ 125 ⎯ pF
C
rss
⎯ 98 ⎯ pF
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Reverse Transfer Capacitance
Notes: 5. Test pulse width t = 300 μs.
6. Guaranteed by design. Not subject to production testing.
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
-V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
V = -5V
Pulsed
DS