Diodes DMP2066LSN - Manual (Page 3)

DMP2066LSN
Document number: DS31467 Rev. 4 - 2
3 of 5
www.diodes.com
August 2011
© Diodes Incorporated
DMP2066LSN
NEW PROD
UC
T
0.01
0.1
1
0 6 12 18 24 30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R
, DRA
IN-
S
OURC
E ON-
RE
S
IST
A
N
CE (
)
DS
(O
N
)
Ω
V = 4.5V
GS
V = 10V
GS
V = 2.5V
GS
0
0.02
0.04
0.06
0.08
0 6 12 18 24 30
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
-I , DRAIN CURRENT (A)
D
R
,
D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
T
A
N
C
E (
)
DS
(O
N)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
Fig. 5 Normalized On-Resistance vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.8
1.0
1.2
1.4
1.6
R
, D
R
AI
N
-S
O
U
R
C
E
ON-
R
ESIS
T
A
NCE (
NORM
A
L
IZ
E
D)
DS
(O
N)
V = 4.5V
I = 5A
GS
D
V = 10V
I = 10A
GS
D
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.4
0.8
1.2
1.6
2.0
2.4
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
Fig. 7 Diode Forward Voltage vs. Current
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
100
1,000
10,000
0 5 10 15 20
C
,
T
O
T
AL
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
f = 1MHz
C
iss
C
oss
C
rss
Fig. 8 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS