Diodes DMP2066LDM - Manual (Page 2)

DMP2066LDM
Document number: DS31464 Rev. 4 - 2
2 of 5
www.diodes.com
December 2011
© Diodes Incorporated
DMP2066LDM
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V DSS
-20 V
Gate-Source Voltage V
GSS
±12 V
Drain Current (Note 4) Continuous T
A
= 25°C
T
A
= 70°C
I
D
-4.6
-3.7
A
Pulsed Drain Current (Note 5) I
DM
-18 A
Body-Diode Continuous Current (Note 4) I
S
2.0 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 4) P
D
1.25 W
Thermal Resistance, Junction to Ambient (Note 4); Steady-State R θJA 100 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
-20 ⎯ ⎯ V I
D
= -250 μA, V
GS
= 0V
Zero Gate Voltage Drain Current T
J
= 25
°C
I
DSS
⎯ ⎯ -1 μA
V
DS
= -20V, V
GS
= 0V
Gate-Body Leakage Current I
GSS
⎯ ⎯ ±100 nA V
DS
= 0V, V
GS
=
±12V
Gate Threshold Voltage V
GS(th)
-0.6 -0.96 -1.2 V V
DS
= V
GS
, I
D
= -250 μA
On State Drain Current (Note 6) I D (ON)
-15 ⎯ ⎯ A V GS = -4.5V, V DS = -5V
Static Drain-Source On-Resistance (Note 6) R
DS (ON)
⎯
29
55 40
70
m
Ω
V
GS
= -4.5V, I
D
= -4.6A
V
GS
= -2.5V, I
D
= -3.8A
Forward Transconductance (Note 6) g
FS
⎯ 9 ⎯ S V
DS
= -10V, I
D
= -4.6A
Diode Forward Voltage (Note 6) V
SD
-0.5 -0.72 -1.4 V I
S
= -2.1A, V
GS
= 0V
Maximum Body-Diode Continuous Current (Note 4) I
S
⎯ ⎯ 1.7 A ⎯
DYNAMIC PARAMETERS (Note 7)
Input Capacitance
C
iss
⎯ 820 ⎯ pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 200 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 160 ⎯ pF
Gate Resistance R
G
⎯ 2.5 ⎯ Ω
V
DS
= 0V, V
GS
= 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
⎯ 10.1 ⎯
nC
V
DS
= -10V, V
GS
= -4.5V,
I D = -4.5A
Gate-Source Charge Q
GS
⎯ 1.5 ⎯
Gate-Drain Charge Q
GD
⎯ 4.3 ⎯
Turn-On Delay Time t
d(on)
⎯ 4.4 ⎯
ns
V
DS
= -10V, V
GS
= -4.5V,
I
D
= -1A, R
G
= 6.0
Ω
Rise Time t
r
⎯ 9.9 ⎯
Turn-Off Delay Time t
d(off)
⎯ 28.0 ⎯
Fall Time t
f
⎯ 23.4 ⎯
Notes: 4. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t
≤10s.
5. Repetitive Rating, pulse width limited by junction temperature.
6. Test pulse width t = 300
μs.
7. Guaranteed by design. Not subject to production testing.