Diodes DMP2039UFDE4 - Manual (Page 2)

DMP2039UFDE4
Document number: DS35675 Rev. 3 - 2
2 of 6
www.diodes.com
March 2012
© Diodes Incorporated
DMP2039UFDE4
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-25 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T A = 25°C
T
A
= 70°C
I D
-7.3
-5.8
A
t<5s
T
A
= 25°C
T
A
= 70°C
I
D
-9.2
-7.3
A
Continuous Drain Current (Note 5) V
GS
= -1.8V
Steady
State
T
A
= 25°C
T A = 70°C
I D
-6.0
-4.7
A
t<5s
T
A
= 25°C
T
A
= 70°C
I
D
-7.6
-6.0
A
Pulsed Drain Current (10 µ s pulse, duty cycle = 1%) I
DM
-60 A
Continuous Source-Drain Diode Current I S
-2.0 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4)
T
A
= 25°C
P D
0.69
W
T
A
= 70°C 0.44
Thermal Resistance, Junction to Ambient (Note 4)
Steady state
R θJA
182
°C/W
t<5s 113
Total Power Dissipation (Note 5)
T A = 25°C
P
D
2.4
W
T
A
= 70°C 1.5
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
52
°C/W
t<5s 33
Thermal Resistance, Junction to Case (Note 5) Steady state R θJC 9.1 °C/W
Operating and Storage Temperature Range T J, T STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-25 ⎯ ⎯ V V
GS
= 0V, I
D
= -250
μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1 µA V
DS
= -25V, V
GS
= 0V
Gate-Source Leakage I GSS
⎯ ⎯ ±10 µA V GS =
±8.0V, V
DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.4 ⎯ -1.0 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
⎯ 19 26
m
Ω
V
GS
= -4.5V, I
D
= -6.4A
⎯ 24 33 V
GS
= -2.5V, I
D
= -4.8A
⎯ 29 40 V
GS
= -1.8V, I
D
= -2.5A
⎯ 35 70 V GS = -1.5V, I D = -1.5A
Forward Transfer Admittance |Y
fs
|
⎯ 14 ⎯ mS V
DS
= -5V, I
D
= -4A
Diode Forward Voltage (Note 5) V
SD
⎯ -0.7 -1.0 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
⎯ 2530 ⎯ pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 203 ⎯ pF
Reverse Transfer Capacitance C rss
⎯ 177 ⎯ pF
Gate Resistance R
g
⎯ 9.1 ⎯ Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge Q
g
⎯ 28.2 ⎯
nC V DS = -15V, I D = -4.0A Gate-Source Charge Q gs
⎯ 48.7 ⎯
Gate-Drain Charge Q
gd
⎯ 3.2 ⎯
Turn-On Delay Time t
D(on)
⎯ 5.0 ⎯
nS
V
DD
= -15V, V
GS
= -4.5V, R
G
= 1 Ω,
I
D
= -4.0A
Turn-On Rise Time t
r
⎯ 15.1 ⎯
Turn-Off Delay Time t
D(off)
⎯ 23.5 ⎯
Turn-Off Fall Time t
f
⎯ 137.6 ⎯
Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6. Short duration pulse test used to minimize self-heating effect
7. Guaranteed by design. Not subject to production testing.