Dmp2035uvt – Diodes DMP2035UVT User Manual
Page 4
DMP2035UVT
Document number: DS35190 Rev. 5 - 2
4 of 6
March 2012
© Diodes Incorporated
DMP2035UVT
0
0.2
0.4
0.6
0.8
1.0
1.2
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E(
V)
GS
(T
H
)
0
2
4
6
8
10
12
14
16
18
20
0
0.3
0.6
0.9
1.2
1.5
-V
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
2
4
6
8
10
12
14
16
18
20
-V
, DRAIN-SOURCE VOLTAGE(V)
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
DS
1
10
100
1,000
10,000
-I
, L
EAK
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
2
4
6
8
10
1
10
100
1,000
100,000
-I
, L
EAK
A
G
E
C
U
R
R
EN
T
(n
A
)
GS
S
10,000
-V
, GATE-SOURCE VOLTAGE(V)
Fig. 10 Typical Gate-Source Leakage Current vs. Voltage
GS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
2
4
6
8
10
12
14
16
18 20
-V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Typical Junction Capacitance
DS
100
1,000
10,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
C
oss
C
rss
f = 1MHz
C
iss
0
4
8
12
16
20
24
28
32
36 40
Q , TOTAL GATE CHARGE (nC)
Fig. 12 Gate-Charge Characteristics
g
0
2
4
6
8
10
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V)
GS