Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMP2035UVT User Manual
Page 2: Dmp2035uvt
DMP2035UVT
Document number: DS35190 Rev. 5 - 2
2 of 6
March 2012
© Diodes Incorporated
DMP2035UVT
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= 25
°C
T
A
= 70
°C
I
D
-6.0
-4.8
A
t<10s
T
A
= 25
°C
T
A
= 70
°C
I
D
-7.2
-5.7
A
Continuous Drain Current (Note 5) V
GS
= -2.5V
Steady
State
T
A
= 25
°C
T
A
= 70
°C
I
D
-5.2
-4.1
A
t<10s
T
A
= 25
°C
T
A
= 70
°C
I
D
-6.2
-4.9
A
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
-2.0 A
Pulsed Drain Current (10
μs pulse, duty cycle = 1%)
I
DM
-24 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 4)
P
D
1.2 W
Thermal Resistance, Junction to Ambient (Note 4)
Steady State
R
θJA
106
°C/W
t<10s 74
Total Power Dissipation (Note 5)
P
D
2.0 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
65
°C/W
t<10s 46
Thermal Resistance, Junction to Case (Note 5)
Steady State
R
θJC
11.8
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-20
⎯
⎯
V
V
GS
= 0V, I
D
= -250
μA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
-1 µA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±10
µA
V
GS
=
±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.4 -0.7 -1.5
V
V
DS
= V
GS
, I
D
= -250
μA
Gate Threshold Voltage Temperature Coefficient
△
V
GS(th)
/
△
T
J
⎯
2.5
⎯
mV/°C
I
D
= -250
μA , Referenced to 25°C
Static Drain-Source On-Resistance
R
DS (ON)
⎯
23 35
m
Ω
V
GS
= -4.5V, I
D
= -4.0A
⎯
30 45
V
GS
= -2.5V, I
D
= -4.0A
⎯
41 62
V
GS
= -1.8V, I
D
= -2.0A
Forward Transfer Admittance
|Y
fs
|
⎯
18
⎯
S
V
DS
= -5V, I
D
= -5.5A
Diode Forward Voltage (Note 5)
V
SD
⎯
-0.7 -1.0 V
V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
⎯
1610 2400
pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
157 210
Reverse Transfer Capacitance
C
rss
⎯
145 200
Gate Resistance
R
G
⎯
9.4 14.1
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
Q
g
⎯
15.4 23.1
nC
V
DS
= -10V, V
GS
= -4.5V
I
D
= -4A
Gate-Source Charge
Q
gs
⎯
2.5
⎯
Gate-Drain Charge
Q
gd
⎯
3.3
⎯
Turn-On Delay Time
t
D(on)
⎯
17 33
ns
V
GS
= -4.5V, V
DS
= -10V, R
G
= 6
Ω,
I
D
= -1A, R
L
= 10
Ω
Turn-On Rise Time
t
r
⎯
12 19
Turn-Off Delay Time
t
D(off)
⎯
94 150
Turn-Off Fall Time
t
f
⎯
42 64
Reverse Recovery Time
t
rr
⎯
14 25 ns
I
F
=-4.5A, di/dt=100A/µS
Reverse Recovery Charge
Q
rr
⎯
4 8 nC
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.