Diodes DMP2038USS - Manual (Page 2)

DMP2038USS
Document number: DS36919 Rev. 2 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMP2038USS
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V
GSS
±8 V
Drain Current (Note 6) Steady
State T
A
= +25°C
T
A
= +70°C
I
D
-6.5
-5.2
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
-25 A
Maximum Continuous Body Diode Forward Current (Note 6) I S 2 A
Avalanche Current (Note 7) L=0.3mH I AS 13.2 A
Avalanche Energy (Note 7) L=0.3mH E AS 26 mJ
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) P
D
2.5 W
Thermal Resistance, Junction to Ambient (Note 6) R
θJA
50 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-20 ⎯ ⎯ V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1 µA V
DS
= -16V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-0.4 ⎯ -1.1 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS(ON)
⎯ 24 38
m Ω
V
GS
= -4.5V, I
D
= -5A
⎯ 33 56 V
GS
= -2.5V, I
D
= -4.3A
Diode Forward Voltage V
SD
⎯ -0.7 -1.2 V V
GS
= 0V, I
S
= -2.1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯ 1496 ⎯ pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 130 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 116 ⎯ pF
Total Gate Charge Q
g
⎯ 14.4 ⎯
nC
V
DS
= -10V, V
GS
= -4.5V
I
D
= -4.5A
Gate-Source Charge Q
gs
⎯ 2.6 ⎯
Gate-Drain Charge Q
gd
⎯ 2.7 ⎯
Turn-On Delay Time t
D(on)
⎯ 13.7 ⎯
ns
V
DD
= -10V, V
GS
= -4.5V,
R
G
= 6Ω, R
L
= 10Ω, I
D
= -1A
Turn-On Rise Time t
r
⎯ 14.0 ⎯
Turn-Off Delay Time t
D(off)
⎯ 79.1 ⎯
Turn-Off Fall Time t
f
⎯ 35.5 ⎯
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.