Dmp2033uvt advanced information, Package outline dimensions, Dmp2033uvt – Diodes DMP2033UVT User Manual
Page 4

DMP2033UVT
Document number: DS36617 Rev. 2 - 2
4 of 5
March 2014
© Diodes Incorporated
DMP2033UVT
ADVANCED INFORMATION
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(T
H
)
0
0.2
0.4
0.6
0.8
1
1.2
-I = 1mA
D
-I = 250µA
D
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 125°C
A
0
2
4
6
8
10
12
14
16
18
20
0
0.3
0.6
0.9
1.2
1.5
T = 150°C
A
T = 85°C
A
T = -55°C
A
T = 25°C
A
10
1000
10000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
pF
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
DS
0
2
4
6
8
10 12
14
16 18
20
100
f = 1MHz
C
oss
C
rss
C
iss
Q , TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
g
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10 12
14
16 18
20
V
= -4V
I = -3.5A
DS
D
Package Outline Dimensions
TSOT26
Dim
Min Max Typ
A
−
1.00
−
A1
0.01 0.10
−
A2
0.84 0.90
−
D
−
−
2.90
E
−
−
2.80
E1
−
−
1.60
b
0.30 0.45
−
c
0.12 0.20
−
e
−
−
0.95
e1
−
−
1.90
L
0.30 0.50
L2
−
−
0.25
θ
0° 8° 4°
θ1
4° 12°
−
All Dimensions in mm
c
A1
L
E1
E
A2
D
e1
e
6x b
θ
4x 1
θ
L2
A