Dmp2033uvt advanced information, Maximum ratings, Thermal characteristics – Diodes DMP2033UVT User Manual
Page 2: Electrical characteristics, Dmp2033uvt

DMP2033UVT
Document number: DS36617 Rev. 2 - 2
2 of 5
March 2014
© Diodes Incorporated
DMP2033UVT
ADVANCED INFORMATION
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 6)
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-4.2
-3.4
A
Pulsed Drain Current (Note 6)
I
DM
-10 A
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
1.2 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
100 °C/W
Total Power Dissipation (Note 6)
P
D
1.7 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
θJA
74 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20
⎯
⎯
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
⎯
⎯
-1.0 µA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100 nA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.5 — -0.9 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS(ON)
⎯
45 65
mΩ
V
GS
= -4.5V, I
D
= -4.2A
57 100
V
GS
= -2.5V, I
D
= -3.4A
80 200
V
GS
= -1.8V, I
D
= -2A
Forward Transfer Admittance
|Y
fs
|
⎯
9
⎯
S
V
DS
= -5V, I
D
= -4A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯
845
⎯
pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
72
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
63
⎯
pF
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Q
g
⎯
10.4
⎯
nC
V
GS
= -4.5V, V
DS
= -4V,
I
D
= -3.5A
Gate-Source Charge
Q
gs
⎯
1.5
⎯
nC
Gate-Drain Charge
Q
gd
⎯
1.9
⎯
nC
Turn-On Delay Time
t
D(on)
⎯
6.5
⎯
ns
V
DS
= -4V, V
GS
= -4.5V,
R
G
= 6
Ω, I
D
= -1A
Turn-On Rise Time
t
r
⎯
13.4
⎯
ns
Turn-Off Delay Time
t
D(off)
⎯
51.5
⎯
ns
Turn-Off Fall Time
t
f
⎯
21.8
⎯
ns
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.