Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMP2008UFG User Manual
Page 2
POWERDI is a registered trademark of Diodes Incorporated
DMP2008UFG
Document number: DS35694 Rev. 13 - 2
2 of 6
June 2013
© Diodes Incorporated
DMP2008UFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage (Note 5)
V
GSS
±8 V
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
I
D
-12
-9.5
-54
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
-80 A
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
-2.2 A
Avalanche Current (Note 8)
I
AS
-15 A
Avalanche Energy (Note 8)
E
AS
-113 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.2
W
T
C
= +25°C
41
Thermal Resistance, Junction to Ambient
(Note 5)
R
ΘJA
59
°C/W
(Note 6)
137
Thermal Resistance, Junction to Case (Note 6)
R
ΘJC
3.0
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BV
DSS
-20 — — V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
— — -1
µA
V
DS
= -16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100
nA
V
GS
=
8V, V
DS
= 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
V
GS(th)
-0.4 — -1.0 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS (ON)
— — 8
m
V
GS
= -4.5V, I
D
= -12A
— — 9.8
V
GS
= -2.5V, I
D
= -10A
— — 13
V
GS
= -1.8V, I
D
= -9.3A
— — 17
V
GS
= -1.5V, I
D
= -8.3A
Forward Transfer Admittance
|Y
fs
|
— 42 — S
V
DS
= -5V, I
D
= -12A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
— 6909 —
pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
—
635
—
Reverse Transfer Capacitance
C
rss
—
563
—
Gate Resistance
R
G
—
2.5
—
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V)
Q
g
—
72
—
nC
V
DD
= -10V, I
D
= -12A
Total Gate Charge (V
GS
= -2.5V)
Q
g
—
40
—
Gate-Source Charge
Q
gs
—
8.6
—
Gate-Drain Charge
Q
gd
—
14.5
—
Turn-On Delay Time
t
D(on)
—
22
—
ns
V
GS
= -4.5V, V
DD
= -10V,
R
G
= 6
, I
D
= -12A
Turn-On Rise Time
t
r
—
33
—
Turn-Off Delay Time
t
D(off)
—
291
—
Turn-Off Fall Time
t
f
—
124
—
BODY DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
— -0.7 — V
V
GS
= 0V, I
S
= -12A
— -0.7 — V
V
GS
= 0V, I
S
= -2A
Reverse Recovery Time (Note 10)
t
rr
—
25
— ns
I
F
= -12A, di/dt = 100A/µs
Reverse Recovery Charge (Note 10)
Q
rr
—
15
— nC
I
F
= -12A, di/dt = 100A/µs
Notes:
5. AEC-Q101 V
GS
maximum is
6.4V.
6. R
ΘJA
is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R
ΘJC
is guaranteed by design
while R
ΘJA
is determined by the user’s board design.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
8 .UIS in production with L = 1mH, T
J
= +25°C
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.