Diodes DMP1045U - Manual (Page 4)

DMP1045U
Document number: DS35051 Rev. 4 - 2
4 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMP1045U
NEW PROD
UC
T
-50 -25 0 25 50 75 100 125 150
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J

0
0.2
0.4
0.6
0.8
1
1.2
I = 250µA
D
I = 1mA
D
I
, SOURC
E CURRE
NT
(
A
)
S
V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1 1.2 1.4
T = 25 C
A

V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
DS
I
, L
EAKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
100000
0 4 8 12 16 20
T =
A
25 C 
T =
A
85 C 
T = 150 C
A

10000
1000
100
10
1
0.1
f = 1MHz
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
pF
)
T
C Ave (pF)
RSS
10
100
1000
C Ave (pF)
ISS
C Ave (pF)
OSS
0 2 4 6 8 10 12
Q -(nC)
Fig. 11 Gate Charge Characteristics
G
V(
V
)
GS
0
2
4
6
8
0 4 8 12 16 20 24 28
V =-10V, I =-4A
DS D