Diodes DMP1045U - Manual (Page 2)

DMP1045U
Document number: DS35051 Rev. 4 - 2
2 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMP1045U
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-12 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
4.0
3.1
A
Continuous Drain Current (Note 5) V
GS
= -2.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
3.3
2.6
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.2
4.2
A
Continuous Drain Current (Note 6) V
GS
= -2.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
4.3
3.4
A
Maximum Continuous Body Diode Forward Current (Note 6) I
S
2 A
Pulsed Drain Current (10µs pulse, duty cycle=1%) (Note 5) I
DM
40 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
0.8 W
Thermal Resistance, Junction to Ambient (Note 5) R
JA
168 °C/W
Total Power Dissipation (Note 6) P
D
1.3 W
Thermal Resistance, Junction to Ambient (Note 6) R
JA
99 °C/W
Thermal Resistance, Junction to Case (Note 6) R
Jc
14.8 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-12 — — V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — -1.0 µA V
DS
= -12V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±10 µA V
GS
= 8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.3 -0.55 -1.0 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS(ON)
— 26 31
mΩ
V
GS
= -4.5V, I
D
= -4.0A
31 45 V
GS
= -2.5V, I
D
= -3.5A
45 75 V
GS
= -1.8V, I
D
= -2.7A
Forward Transfer Admittance |Y
fs
| — 12 — S V
DS
= -5V, I
D
= -4A
Diode Forward Voltage V
SD
— -0.6 — V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 1357 — pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
— 504 — pF
Reverse Transfer Capacitance C
rss
— 235 — pF
Gate Resistnace R
g
— 14.1 — Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Q
g
— 15.8 — nC
V
GS
= -4.5V, V
DS
= -10V, I
D
= -4A Gate-Source Charge Q
gs
— 2.0 — nC
Gate-Drain Charge Q
gd
— 3.9 — nC
Turn-On Delay Time t
D(on)
— 15.7 — ns
V
DS
= -10V, V
GS
= -4.5V,
R
L
= 2.5 , R
G
= 3.0 
Turn-On Rise Time t
r
— 23.3 — ns
Turn-Off Delay Time t
D(off)
— 91.2 — ns
Turn-Off Fall Time t
f
— 106.9 — ns
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.