Diodes DMP1018UCB9 - Manual (Page 2)

DMP1018UCB9
Document number: DS36149 Rev. 2 - 2
2 of 6
www.diodes.com
June 2013
© Diodes Incorporated
DMP1018UCB9
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-12 V
Gate-Source Voltage V
GSS
-6 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-7.6
-6.0
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-5.5
-4.3
A
Pulsed Drain Current (Pulse duration 10μs, duty cycle ≤1%) I
DM
-60 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
1.0 W
Total Power Dissipation (Note 6) P
D
1.8 W
Thermal Resistance, Junction to Ambient (Note 5) R ΘJA
126.8 °C/W
Thermal Resistance, Junction to Ambient (Note 6) R ΘJA 69 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-12 - - V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current @T
C
= +25°C I
DSS
- - -1 μA V
DS
= -9.6V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - -100 nA V
GS
= -6V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.4 -0.8 -1.3 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS (ON)
-
12 18
m 
V
GS
= -4.5V, I
D
= -2A
15 22 V
GS
= -2.5V, I
D
= -2A
Forward Transfer Admittance |Y
fs
| - 5.5 - S V
DS
= -6V, I
D
= -2A
Diode Forward Voltage (Note 6) V
SD
- -0.7 -1 V V
GS
= 0V, I
S
= -2A
Reverse Recovery Charge Q
rr
- 30.2 - nC V
dd
= -5V, I
F
= -2A,
di/dt = 200A/µs Reverse Recovery Time t
rr
- 71.4 - ns
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 457 - pF
V
DS
= -6V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 272 - pF
Reverse Transfer Capacitance C
rss
- 120 - pF
Series Gate Resistance R
G
21.23 -  V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (4.5V) Q
g
- 4.9 - nC
V
GS
= -4.5V, V
DS
= -6V,
I
D
= -2A
Gate-Source Charge Q
gs
- 0.6 - nC
Gate-Drain Charge Q
gd
- 1.1 - nC
Turn-On Delay Time t
D(on)
- 4.45 - ns
V
DD
= -6V, V
GS
= -4.5V,
I
DS
= -2A, R
G
= 2 ,
Turn-On Rise Time t
r
- 12.0 - ns
Turn-Off Delay Time t
D(off)
- 100 - ns
Turn-Off Fall Time t
f
- 93 - ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch 2 (6.45-cm 2 ), 2-oz. (0.071-mm thick) Cu
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.