Diodes DMP1018UCB9 - Manual

DMP1018UCB9
Document number: DS36149 Rev. 2 - 2
1 of 6
www.diodes.com
June 2013
© Diodes Incorporated
DMP1018UCB9
ADVAN
CE I
N
F
O
RM
ATI
O
N
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
-12V 18m  @ V
GS
= -4.5V -7.6 A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior
switching performance, making it ideal for high efficiency power
management applications.
Applications
 Battery Management
 Load Switch
 Battery Protection
Features
 Low Q
g
& Q
gd
 Small Footprint 1.5-mm × 1.5-mm
 Gate ESD Protection 3kV
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
 Case: U-WLB1515-9
 Terminal Connections: See Diagram Below
Ordering Information
(Note 4)
Part Number Case Packaging
DMP1018UCB9-7 U-WLB1515-9 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top-View
Pin Configuration
EW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
Equivalent Circuit ESD PROTECTED TO 3kV
G S
S
D D D
S
S S
Source
Gate
Drain
EW
YM