Diodes DMG3413L - Manual (Page 2)

DMG3413L
Document number: DS35051 Rev. 4 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG3413L
NEW PROD
UC
T
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
0.7 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R θJA
184
°C/W
t<10s 115
Total Power Dissipation (Note 6) P
D
1.3 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R θJA
94
°C/W t<10s 61
Thermal Resistance, Junction to Case R θJC 25
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V GSS
8 V
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
3.0
2.4
A
t<10s
T
A
= +25°C
T A = +70°C
I
D
3.7
2.9
A
Continuous Drain Current (Note 6) V GS = -2.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
2.5
2.0
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
3.2
2.5
A
Maximum Continuous Body Diode Forward Current (Note 6) I S
1.9 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
20 A
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20 — — V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
— — -1.0 µA V
DS
= -16V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= 8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.6 -0.55 -1.3 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS(ON)
—
73 95
m Ω
V GS = -4.5V, I D = -3.0A
95 130 V
GS
= -2.5V, I
D
= -2.6A
146 190 V
GS
= -1.8V, I
D
= -1A
Forward Transfer Admittance |Y
fs
| — 8 - S V
DS
= -5V, I
D
= -3A
Diode Forward Voltage V
SD
— -0.8 -1.25 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C iss
— 857 — pF
V DS = -10V, V GS = 0V
f = 1.0MHz
Output Capacitance C
oss
— 54 — pF
Reverse Transfer Capacitance C
rss
— 49 — pF
Gate Resistnace R
g
— 12.3 — Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge Q
g
— 9.0 — nC
V
GS
= -4.5V, V
DS
= -15V, I
D
= -4A Gate-Source Charge Q
gs
— 1.6 — nC
Gate-Drain Charge Q
gd
— 1.1 — nC
Turn-On Delay Time t D(on)
— 9.7 — ns
V DS = -15V, V GS = -10V,
R L = 15
, R
G = 6.0
I
D = -1A
Turn-On Rise Time t
r
— 17.7 — ns
Turn-Off Delay Time t
D(off)
— 268.8 — ns
Turn-Off Fall Time t f
— 64.2 — ns
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.