Dmg1013t new prod uc t, Dmg1013t – Diodes DMG1013T User Manual
Page 3

DMG1013T
Document number: DS31784 Rev. 5 - 2
3 of 6
March 2012
© Diodes Incorporated
DMG1013T
NEW PROD
UC
T
0
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
5
Fig. 1 Typical Output Characteristic
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
V
= -1.2V
GS
V
= -1.5V
GS
V
= -2.0V
GS
V
= -2.5V
GS
V
= -3.0V
GS
V
= -4.5V
GS
V
= -8.0V
GS
0
0.5
1
1.5
2
2.5
3
Fig. 2 Typical Transfer Characteristic
-V
, GATE-SOURCE VOLTAGE (V)
GS
0
2
4
6
8
10
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= -5V
DS
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
0.3
0.6
0.9
1.2
1.5
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
T
A
N
C
E (
)
DS
(O
N)
Ω
V
= -2.5V
GS
V
= -4.5V
GS
V
= -1.8V
GS
0
0.2
0.4
0.6
0.8
1.0
0
0.3
0.6
0.9
1.2
1.5
R
,
D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
T
A
N
C
E (
)
DS
(O
N)
Ω
-I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= -4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
0.5
0.7
0.9
1.1
1.3
1.5
1.7
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
ST
ANCE (
N
O
R
M
A
L
IZED)
DS
O
N
V
= -4.5V
I = -1.0A
GS
D
V
= -2.5V
I = -500mA
GS
D
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 6 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DRA
IN-
S
OURC
E
ON-RE
S
IS
T
A
N
C
E
(
)
DS
O
N
Ω
V
= -4.5V
I = -1.0A
GS
D
V
= -2.5V
I = -500mA
GS
D