Diodes DMG1013T - Manual (Page 2)

DMG1013T
Document number: DS31784 Rev. 5 - 2
2 of 6
www.diodes.com
March 2012
© Diodes Incorporated
DMG1013T
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V DSS
-20 V
Gate-Source Voltage V
GSS
±6 V
Drain Current (Note 4) Steady
State
T
A
= 25
°C
T
A
= 85
°C
I D
-0.46
-0.33
A
Pulsed Drain Current (Note 5) I
DM
-6 A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) P
D
0.27 W
Thermal Resistance, Junction to Ambient (Note 4) R θJA 461 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-20 - - V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current T J = 25°C I DSS
- - -100 nA V DS = -20V, V GS = 0V
Gate-Source Leakage I
GSS
- - ±2.0 μA
V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
-0.5 - -1.0 V V DS = V GS , I D = -250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
0.5 0.7
Ω
V
GS
= -4.5V, I
D
= -350mA
0.7 0.9 V
GS
= -2.5V, I
D
= -300mA
1.0 1.3 V GS = -1.8V, I D = -150mA
Forward Transfer Admittance |Y
fs
| - 0.9 - S V
DS
= -10V, I
D
= -250mA
Diode Forward Voltage V
SD
-0.8 -1.2 V V
GS
= 0V, I
S
= -150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
- 59.76 - pF
V
DS
= -16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 12.07 - pF
Reverse Transfer Capacitance C rss
- 6.36 - pF
Total Gate Charge Q
g
- 580 - pC
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -250mA
Gate-Source Charge Q
gs
- 104 - pC
Gate-Drain Charge Q gd
- 125 - pC
Turn-On Delay Time t
D(on)
- 5.1 - ns
V DD = -10V, V GS = -4.5V,
R
L
= 47 Ω, R
G
= 10 Ω,
I
D
= -200mA
Turn-On Rise Time t
r
- 8.1 - ns
Turn-Off Delay Time t
D(off)
- 28.4 - ns
Turn-Off Fall Time t
f
- 20.7 - ns
Notes: 4. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in
steady-state condition.
5. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10
μs.
6. Measured under pulsed conditions to minimize self-heating effect. Pulse width ≤ 300μs; duty cycle ≤ 2%
7. For design aid only, not subject to production testing.