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Dmn30h4d0lfde new prod uc t, Dmn30h4d0lfde – Diodes DMN30H4D0LFDE User Manual

Page 3

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DMN30H4D0LFDE

Document number: DS36380 Rev. 4 - 2

3 of 6

www.diodes.com

May 2014

© Diodes Incorporated

DMN30H4D0LFDE

NEW PROD

UC

T




V , DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

DS

I,

D

R

AI

N

C

U

R

R

EN

T

(A

)

D

V

= 2.0V

GS

V

= 2.7V

GS

V

= 5V

GS

V

= 10V

GS

0.0

0.3

0.6

0.9

1.2

1.5

0

1

2

3

4

5

V

= 2.5V

GS

V

= 3.0V

GS

0

0.5

1.0

1.5

2.0

2.5

3.0

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

I,

D

R

AI

N

C

U

R

R

ENT (

A

)

D

0.2

0.4

0.6

0.8

0

1.0

V

= 10V

DS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

I , DRAIN-SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

R

, D

R

AI

N-

S

O

U

R

CE

O

N-

R

ES

IS

TA

NC

E (

)

DS

(O

N

)

Ω

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

0

0.2

0.4

0.6

0.8

1.0

3.0

2.0

V

= 2.5V

GS

V

= 4.5V

GS

V

= 10V

GS

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 4 Typical Transfer Characteristics

R

, D

R

AI

N-

S

O

U

R

C

E

O

N-

R

ESI

S

TAN

C

E (

)

DS

(O

N)

Ω

2

2.5

3

3.5

4

4.5

5

5.5

6

0

2

4

6

I = 100mA

D

8

10 12

14 16

18 20

I = 300A

D

I , DRAIN CURRENT (A)

D

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

R

, D

R

AI

N-

S

O

U

R

CE

O

N-

R

ESI

ST

ANCE

(

)

DS

(O

N)

Ω

0

1

2

3

4

5

6

7

8

0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 4.5V

GS

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 6 On-Resistance Variation with Temperature

J

°

R

, D

R

AI

N-

S

O

U

R

C

E

ON-

R

ESI

S

TA

NCE (

N

O

R

M

A

LI

Z

E

D)

DS(

O

N

)

0.4

0.8

1.2

1.6

2.4

2.0

V

=

V

I = 200mA

GS

D

2.7

V

=

V

I = 1A

GS

D

10