Diodes DMN30H14DLY - Manual (Page 2)

DMN30H14DLY
Document number: DS36812 Rev. 2 - 2
2 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN30H14DLY
ADVANCED INFORMATION
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
300 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
0.21
0.16
A
Pulsed Drain Current (10μs pulse, duty cycle ≦1%) I
DM
1
A
Maximum Body Diode Continuous Current (Note 6) I
S
2 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P
D
0.9
W
(Note 6) 2.2
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
132
°C/W (Note 6) 55
Thermal Resistance, Junction to Case (Note 6) R
θJC
9.6
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
300 ⎯ ⎯ V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 1 µA V
DS
= 240V, V
GS
= 0V
Gate-Body Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1 ⎯ 3 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS(ON)
⎯ 6 14
Ω
V
GS
= 10V, I
D
= 0.3A
⎯ 6 20 V
GS
= 4.5V, I
D
= 0.2A
Diode Forward Voltage V
SD
⎯ 0.7 1.2 V V
GS
= 0V, I
S
= 0.3A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯ 96 ⎯
pF
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
Output Capacitance C
oss
⎯ 5.8 ⎯
Reverse Transfer Capacitance C
rss
⎯ 3.2 ⎯
Gate Resistance R
G
⎯ 12 ⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge Q
g
⎯ 4 ⎯
nC
V
DS
= 192V, V
GS
= 10V,
I
D
= 0.5A
Gate-Source Charge Q
gs
⎯ 0.3 ⎯
Gate-Drain Charge Q
gd
⎯ 1.9 ⎯
Turn-On Delay Time t
D(on)
⎯ 3.3 ⎯
nS
V
DS
= 60V, R
L
=200Ω
V
GS
= 10V, R
G
= 25Ω
Turn-On Rise Time t
r
⎯ 8.6 ⎯
Turn-Off Delay Time t
D(off)
⎯ 22 ⎯
Turn-Off Fall Time t
f
⎯ 12 ⎯
Reverse Recovery Time t
rr
⎯ 43 ⎯ nS
V
R
= 100V, I
F
=1.0A, di/dt=100A/µs
Reverse Recovery Charge Q
rr
⎯ 47 ⎯ nC
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing