Diodes DMN24H11DS - Manual (Page 4)

DMN24H11DS
Document number: DS37092 Rev. 3 - 2
4 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN24H11DS
ADVANCED INFORMATION
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J

R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
TA
N
C
E (
)
DS
(O
N)

0
3
6
9
12
15
-50 -25 0 25 50 75 100 125 150
V = V
I = 200mA
GS
D
5.0
V = V
I = 400mA
GS
D
10
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J

V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50 -25 0 25 50 75 100 125 150
I = 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
0
0.1
0.2
0.3
0.4
0.5
0 0.3 0.6 0.9 1.2 1.5
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
TI
O
N
C
A
P
A
C
IT
A
N
C
E (
pF
)
T
1
10
100
1000
0 5 10 15 20 25 30 35 40
C
iss
C
oss
C
rss
Q (nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
L
D
V
O
LT
A
G
E (
V
)
GS
0
2
4
6
8
10
0 0.5 1 1.5 2 2.5 3 3.5 4
V = 192V
I = A
DS
D
0.1
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
0.001
0.01
0.1
1
0.1 1 10 100 1000
R
Limited
DS(on)
T = 150°C
T = 25°C
V
= 10V
Single Pulse
J(max)
A
GS
DUT on 1 * MRP Board