Dmn24h11ds advanced information, Maximum ratings, Thermal characteristics – Diodes DMN24H11DS User Manual
Page 2: Electrical characteristics, Dmn24h11ds
DMN24H11DS
Document number: DS37092 Rev. 3 - 2
2 of 6
April 2014
© Diodes Incorporated
DMN24H11DS
ADVANCED INFORMATION
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
240 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
0.27
0.22
A
Pulsed Drain Current (10μs pulse, duty cycle
≦1%) I
DM
0.8 A
Maximum Body Diode Continuous Current (Note 5)
I
S
0.8 A
Peak diode recovery dv/dt
dv/dt
6.0
V/ns
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation
(Note 5)
P
D
0.75
W
(Note 6)
1.2
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
166
°C/W
(Note 6)
104
Thermal Resistance, Junction to Case
(Note 6)
R
θJC
35
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
240
V
V
GS
= 0V,
I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
100 nA
V
DS
= 240V,
V
GS
= 0V
Gate-Body Leakage
I
GSS
±100 nA
V
GS
=
±20V,
V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0 2.0 3.0 V
V
DS
= V
GS
,
I
D
= 250µA
Static Drain-Source On-Resistance
R
DS (ON)
3.7 11
Ω
V
GS
= 10V,
I
D
=
0.3A
4.0 12
V
GS
= 4.5V,
I
D
=
0.2A
Diode Forward Voltage
V
SD
0.7 1.2
V
V
GS
= 0V, I
S
= 0.1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
76.8
pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
6.9
Reverse Transfer Capacitance
C
rss
4.1
Gate Resistance
R
G
17
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
Q
g
3.7
nC
V
DS
= 192V, V
GS
= 10V,
I
D
= 0.1A
Gate-Source Charge
Q
gs
0.3
Gate-Drain Charge
Q
gd
2.1
Turn-On Delay Time
t
D(on)
4.8
nS
V
DS
= 120V, I
D
= 0.1A,
V
GS
= 10V, R
G
= 6.0Ω
Turn-On Rise Time
t
r
4.7
Turn-Off Delay Time
t
D(off)
17.5
Turn-Off Fall Time
t
f
102.3
Reverse Recovery Time
t
rr
45.6
nS
V
R
= 100V, I
F
= 1.0A,
di/dt = 100A/µs
Reverse Recovery Charge
Q
rr
51.6
nC
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.