Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN10H170SK3 User Manual
Page 2
DMN10H170SK3
Document number: DS35734 Rev. 4
2 of 6
May 2013
© Diodes Incorporated
DMN10H170SK3
N
EW
PR
O
D
U
C
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
100
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current (Note 4) V
GS
= 10V
Steady
State
T
C
= +25°C
T
C
= +100°C
I
D
12
7.5
A
Maximum Body Diode Forward Current (Note 4)
I
S
4
A
Pulsed Drain Current (10
µs pulse, duty cycle = 1%)
I
DM
16
A
Avalanche Current (Note 5)
I
AR
5.3
A
Avalanche Energy (Note 5)
E
AR
20
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 4)
T
C
= +25°C
P
D
42
W
T
C
= +100°C
17
Thermal Resistance, Junction to Ambient (Note 4)
R
θJA
44
°C/W
Thermal Resistance, Junction to Case (Note 4)
R
θJC
3
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
5. UIS in production with L = 1.43mH, TJ = +25°C.
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
100
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
1
µA
V
DS
= 100V, V
GS
= 0V
Gate-Source Leakage
I
GSS
100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
1.0
3.0
V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS (ON)
99
140
m
Ω
V
GS
= 10V, I
D
= 5A
104
160
V
GS
= 4.5V, I
D
= 5A
Diode Forward Voltage
V
SD
0.7
1.0
V
V
GS
= 0V, I
S
= 10A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
1167
pF
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
36
Reverse Transfer Capacitance
C
rss
25
Gate Resistance
R
G
1.3
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
4.9
nC
V
DS
= 80V, I
D
= 12.8A
Total Gate Charge (V
GS
= 10V)
Q
g
9.7
Gate-Source Charge
Q
gs
2.0
Gate-Drain Charge
Q
gd
2.0
Turn-On Delay Time
t
D(on)
10.5
ns
V
DD
= 50V, R
G
= 25
Ω, I
D
= 12.8A
Turn-On Rise Time
t
r
11.1
Turn-Off Delay Time
t
D(off)
42.6
Turn-Off Fall Time
t
f
12.8
Body Diode Reverse Recovery Time
t
rr
30.3
ns
V
GS
= 0V, I
S
= 12.8A, dI/dt = 100A/µs
Body Diode Reverse Recovery Charge
Q
rr
35.2
nC
V
GS
= 0V, I
S
= 12.8A, dI/dt = 100A/µs
Notes:
6. Short duration pulse test used to minimize self-heating effect
7. Guaranteed by design; not subject to production testing