Dmj7n70sk3 new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMJ7N70SK3 User Manual
Page 2: Electrical characteristics, Dmj7n70sk3
DMJ7N70SK3
Document number: DS36907 Rev. 3 - 2
2 of 6
May 2014
© Diodes Incorporated
DMJ7N70SK3
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value Units
Drain-Source Voltage
V
DSS
700 V
Gate-Source Voltage
V
GSS
±30 V
Continuous Drain Current (Note 5) V
GS
= 10V
T
C
= +25°C
T
C
= +100°C
I
D
3.9
2.5
A
Maximum Body Diode Forward Current (Note 5)
I
S
3.0 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
15.6 A
Avalanche Current (Note 6)
I
AR
1.5 A
Avalanche Energy (Note 6)
E
AR
76 mJ
Peak Diode Recovery dv/dt
dv/dt
11.8
V/ns
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value Units
Total Power Dissipation (Note 5)
T
C
= +25°C
P
D
28
W
T
C
= +100°C
11
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
38
°C/W
Thermal Resistance, Junction to Case (Note 5)
R
θJC
2.1
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
700
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
1 µA
V
DS
= 700V, V
GS
= 0V
Gate-Source Leakage
I
GSS
100 nA
V
GS
= ±30V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
2 2.9 4 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS(ON)
1 1.25 Ω
V
GS
= 10V, I
D
= 2.5A
Diode Forward Voltage
V
SD
0.9 1.3 V
V
GS
= 0V, I
S
= 5A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
351
pF
V
DS
= 50V, f = 1MHz,
V
GS
= 0V
Output Capacitance
C
oss
66
Reverse Transfer Capacitance
C
rss
1.1
Gate Resistance
R
G
3.5
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
13.9
nC
V
DD
= 560V, I
D
= 5A,
V
GS
= 10V
Gate-Source Charge
Q
gs
1.9
Gate-Drain Charge
Q
gd
8.5
Turn-On Delay Time
t
D(on)
8.5
ns
V
DD
= 350V, V
GS
= 10V,
R
G
= 4.7Ω, I
D
= 2.5A
Turn-On Rise Time
t
r
11.6
Turn-Off Delay Time
t
D(off)
24.5
Turn-Off Fall Time
t
f
10
Body Diode Reverse Recovery Time
t
rr
212
ns
I
S
= 5A, dI/dt = 100A/μs
Body Diode Reverse Recovery Time (T
J
= +150°C)
t
rr
251
ns
Body Diode Reverse Recovery Charge
Q
rr
1.8
µC
Body Diode Reverse Recovery Charge (T
J
= +150°C)
Q
rr
2.3
µC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. UIS in production with V
DD
= 50V, V
GS
= 10V, L = 60mH, T
J
= +25°C.
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing