Diodes DMGD7N45SSD - Manual (Page 4)

DMGD7N45SSD
Document number: DS36011 Rev. 7 - 2
4 of 7
www.diodes.com
February 2014
© Diodes Incorporated
DMGD7N45SSD
NEW PROD
UC
T
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ES
IS
TAN
C
E (
)
DS
(O
N)
Ω
0
1
2
3
4
5
6
7
8
9
10
V =20V
I = 1.0A
GS
D
V = V
I = 0.7A
GS
D
10
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
2.5
3.5
4.5
I = 1mA
D
I = 250µA
D
3.0
4.0
5.0
2.0
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
0 0.3 0.6 0.9 1.2 1.5
T = 25°C
A
0
1.0
2.0
T = 150°C
A
T = 125°C
A
T =85°C
A
T = -55°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
1000
0 5 10 15 20 25 30 35 40
C
iss
C
oss
C
rss
100
10
1
0
f = 1MHz
Q (nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
AT
E
T
H
R
ES
H
O
LD
V
O
LTA
G
E (
V
)
GS
0
2
4
6
8
10
0 1 2 3 4 5 6 7
V = 360V
I = A
DS
D
0.7
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
10
0.1 1 10 100 1000
1
0.1
0.01
0.001
P = 100µs
W
T = 150°C
T = 25°C
J(max)
A
V = 10V
Single Pulse
GS
DUT on 1 * MRP FR-4 Board