Diodes DMGD7N45SSD - Manual (Page 2)

DMGD7N45SSD
Document number: DS36011 Rev. 7 - 2
2 of 7
www.diodes.com
February 2014
© Diodes Incorporated
DMGD7N45SSD
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
450 V
Gate-Source Voltage V
GSS
±30 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady State
I
D
0.5
A
t < 10s 0.62
t < 1s 0.85 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
2.2 A
Maximum Body Diode Forward Current (Note 5) I
S
1.7 A
Avalanche Current (Note 6)
L = 60mH
I
AS
1.4
A
L = 10mH (Note 8) 2.2
Avalanche Energy (Note 6)
L = 60mH
E
AS
56
mJ
L = 10mH (Note 8) 25
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
1.64 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
ΘJA
78 °C/W
t<10s 20.2 °C/W
Thermal Resistance, Junction to Case (Note 5) R
ΘJC
13.3 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
450 ⎯ ⎯ V V
GS
= 0V, I
D
= 10mA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 1 µA V
DS
= 450V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±30V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
3.5 ⎯ 4.5 V V
DS
=10V I
D
= 1mA
Static Drain-Source On-Resistance R
DS (ON)
⎯ 3 4 Ω V
GS
= 10V, I
D
= 0.4A
Forward Transfer Admittance |Y
fs
| 0.55 1.1 ⎯ S V
DS
= 10V, I
D
=0.4A
Diode Forward Voltage V
SD
⎯ 0.7 1.2 V V
GS
= 0V, I
S
= 0.7A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯ 256 ⎯
pF
V
DS
= 25V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
⎯ 22.5 ⎯
Reverse Transfer Capacitance C
rss
⎯ 0.83 ⎯
Gate Resistance R
G
⎯ 2.3 ⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 10V) Q
g
⎯ 6.9 ⎯
nC V
DS
= 360V,I
D
= 0.7A, V
GS
= 10V Gate-Source Charge Q
gs
⎯ 1.4 ⎯
Gate-Drain Charge Q
gd
⎯ 3.4 ⎯
Turn-On Delay Time t
D(on)
⎯ 7 ⎯
nS
V
GS
= 10V, R
L
= 562Ω , R
G
= 10Ω,
I
D
= 0.4A
Turn-On Rise Time t
r
⎯ 6.4 ⎯
Turn-Off Delay Time t
D(off)
⎯ 18.9 ⎯
Turn-Off Fall Time t
f
⎯ 56.6 ⎯
Body Diode Reverse Recovery Time t
rr
⎯ 103 ⎯ nS
I
F
= 1A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge Q
rr
⎯ 314 ⎯ nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.