Diodes DMG9N65CT - Manual (Page 4)

DMG9N65CT
Document number: DS35619 Rev. 6 - 2
4 of 6
www.diodes.com
February 2013
© Diodes Incorporated
DMG9N65CT
2
3
4
5
6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J

V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
I = 1mA
D
I = 250µA
D
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(V
)
S
T = 25°C
A
1 10 100 1,000
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 SOA, Safe Operation Area
DS
0.001
0.1
1
10
100
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0.01
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
T = 25°C
J(max)
A
V = 10V
Single Pulse
GS
DUT on 1 * MRP Board
0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 10 Transient Thermal Resistance
10,000
0.001
0.01
0.1
1
r(t
),
T
R
ANS
IEN
T
T
H
E
R
MA
L
R
ES
IS
TAN
C
E
R = r * R
JA(t) (t) 

JA
JA
R = 57 C/W
Duty Cycle, D = t1/t2

D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse