Diodes DMG9N65CT - Manual (Page 2)

DMG9N65CT
Document number: DS35619 Rev. 6 - 2
2 of 6
www.diodes.com
February 2013
© Diodes Incorporated
DMG9N65CT
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
650 V
Gate-Source Voltage V
GSS
±30 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
C
= +25°C
T
C
= +70°C
I
D
9.0
7.0
A
Pulsed Drain Current (Note 6) I
DM
30 A
Avalanche Current (Note 7) V
DD
= 100V, V
GS
= 10V, L = 60mH I
AR
2.7 A
Repetitive Avalanche Energy (Note 7) V
DD
= 100V, V
GS
= 10V, L = 60mH E
AR
260 mJ
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 5) T
C
= +25°C
T
C
= +70°C
P
D
165
100
W
Thermal Resistance, Junction to Case (Note 5) R
θJC
0.7 °C/W
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
650 — — V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1.0 µA V
DS
= 650V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±30V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
3 — 5 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
— 0.7 1.3 Ω V
GS
= 10V, I
D
= 4.5A
Forward Transfer Admittance |Y
fs
| — 8.5 — S V
DS
= 40V, I
D
= 4.5A
Diode Forward Voltage V
SD
— 0.7 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 2310 —
pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 122 —
Reverse Transfer Capacitance C
rss
— 2.2 —
Gate Resistance R
g
— 2.2 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge V
GS
= 10V Q
g
— 39 —
nC
V
GS
= 10V, V
DS
= 520V,
I
D
= 8A
Gate-Source Charge Q
gs
— 8.5 —
Gate-Drain Charge Q
gd
— 11.9 —
Turn-On Delay Time t
D(on)
— 39 — ns
V
GS
= 10V, V
DS
= 325V,
R
G
= 25Ω, I
D
= 8A
Turn-On Rise Time t
r
— 29 — ns
Turn-Off Delay Time t
D(off)
— 122 — ns
Turn-Off Fall Time t
f
— 28 — ns
Body Diode Reverse Recovery Time t
rr
— 570 — ns dI/dt = 100A/µs, V
DS
= 100V,
I
F
= 8A Body Diode Reverse Recovery Charge Q
rr
— 4.17 — µC
Notes: 5. Device mounted on an infinite heatsink
6. Repetitive rating, pulse width limited by junction temperature.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.