Dmg4n65cti – Diodes DMG4N65CTI User Manual
Page 3
DMG4N65CTI
Document number: DS36122 Rev. 1 - 2
3 of 6
November 2012
© Diodes Incorporated
DMG4N65CTI
ADVAN
CE I
N
F
O
RM
ATI
O
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
4
8
12
16
20
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0.001
0.01
0.1
1
10
2
3
4
5
6
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
V
= 10V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
1
2
3
4
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AI
N
-S
O
U
R
CE
O
N-
R
ES
IST
A
NCE
(
)
DS
(O
N)
Ω
V
= 10V
GS
V
= 20V
GS
0
1
2
3
4
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AI
N
-S
O
U
R
CE
O
N-
R
ES
IST
A
NCE
(
)
DS
(O
N)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 10V
GS
0
0.5
1.0
1.5
2.0
2.5
3.0
-50
-25
0
25
50
75
100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N
-S
O
U
R
C
E
ON-
R
ESIS
TA
NCE (
N
O
R
M
A
LI
Z
E
D)
DS
(O
N)
V
=
V
I = 4A
GS
D
15
V
=
V
I = 2A
GS
D
10
0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N
-S
O
U
R
C
E
ON-
R
ESIS
TA
NCE (
N
ORM
A
LI
Z
E
D)
DS
(O
N)
V
=
V
I = 4A
GS
D
15
V
=
V
I = 2A
GS
D
10
V
=
V
I = 4A
GS
D
15
V
=
V
I = 2A
GS
D
10