Diodes DMG4N65CT - Manual (Page 2)

DMG4N65CT
Document number: DS35719 Rev. 4 - 2
2 of 6
www.diodes.com
November 2012
© Diodes Incorporated
DMG4N65CT
ADVAN
CE I
N
F
O
RM
ATI
O
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
650 V
Gate-Source Voltage V
GSS
±30 V
Continuous Drain Current (Note 5)
V
GS
= 10V
Steady
State
T
C
= +25°C
T
C
= +70°C
I
D
4.0
3.0
A
Pulsed Drain Current (Note 7) I
DM
6 A
Avalanche Current (Note 8) V
DD
= 100V, V
GS
= 10V, L = 60mH I
AS
3.9 A
Repetitive avalanche energy (Note 7) E
AS
456 mJ
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 5) P
D
2.19 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5) R
θJA
58.5 °C/W
Power Dissipation (Note 6) P
D
9.14 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6) R
θJA
2.85 °C/W
Thermal Resistance, Junction to Case @T
A
= +25°C (Note 6) R
θJC
0.86 °C/W
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BV
DSS
650 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1.0 μA V
DS
= 650V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±30V, V
DS
= 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
V
GS(th)
3 - 5 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
- 2.1 3.0 Ω V
GS
= 10V, I
D
= 2A
Forward Transfer Admittance |Y
fs
| - 3.7 - S V
DS
= 40V, I
D
= 2A
Diode Forward Voltage V
SD
- 0.7 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
- 900 -
pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 50 -
Reverse Transfer Capacitance C
rss
- 1.1 -
Gate Resistance R
g
- 2.4 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge V
GS
= 10V Q
g
- 13.5 -
nC
V
GS
= 10V, V
DS
= 520V,
I
D
= 4A
Gate-Source Charge Q
gs
- 2.7 -
Gate-Drain Charge Q
gd
- 3.8 -
Turn-On Delay Time t
D(on)
- 15.1 - ns
V
GS
= 10V, V
DS
= 325V,
R
G
= 25Ω, I
D
= 4A
Turn-On Rise Time t
r
- 13.8 - ns
Turn-Off Delay Time t
D(off)
- 40 - ns
Turn-Off Fall Time t
f
- 16 - ns
Body Diode Reverse Recovery Time t
rr
- 515 - ns dI/dt = 100A/ μs, V
DS
= 100V,
I
F
= 4A Body Diode Reverse Recovery Charge Q
rr
- 2330 - nC
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on an infinite heatsink
7. Repetitive rating, pulse width limited by junction temperature.
8. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.