Diodes DMN66D0LDW - Manual (Page 2)

DMN66D0LDW
Document number: DS31232 Rev. 6 - 2
2 of 5
www.diodes.com
February 2014
© Diodes Incorporated
DMN66D0LDW
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
60 V
Gate-Source Voltage (Note 5) Continuous V
GSS
±20 V
Drain Current (Note 5) Continuous
Continuous @ +100°C
Pulsed
I
D
115
73
800
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation
Derating above T
A
= +25°C (Note 5)
P
D
250
1.6
mW
mW/°C
Thermal Resistance, Junction to Ambient R
θJA
500 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
60 70 ⎯ V V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current @ T
C
= +25°C
@ T
C
= +125°C
I
DSS
⎯ ⎯
1.0
500
µA V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage I
GSS
⎯ ⎯ ±5 μA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
1.2 ⎯ 2.0 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance @ T
J
= +25°C
@ T
J
= +125°C
R
DS (ON)
⎯
3.5
3.0 6
5
Ω
V
GS
= 5.0V, I
D
= 0.115A
V
GS
= 10V, I
D
= 0.115A
Forward Transconductance g
FS
80 V SD ⎯ mS V
DS
= 10V, I
D
= 0.115
Diode Forward Voltage V
SD
⎯ 0.8 1.2 V V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ 23 ⎯ pF
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz Output Capacitance C
oss
⎯ 3.4 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 1.4 ⎯ pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
⎯ 10 ⎯ ns V
DD
= 30V, I
D
= 0.115A, R
L
= 150 Ω,
V
GEN
= 10V
,
R
GEN
= 25 Ω Turn-Off Delay Time t
D(OFF)
⎯ 33 ⎯ ns
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.