Electrical characteristics – Diodes DMN6068LK3 User Manual
Page 4
DMN6068LK3
Document Number DS32057 Rev 4 - 2
4 of 8
May 2013
© Diodes Incorporated
DMN6068LK3
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
60
V
I
D
= 250
µA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
0.5
µA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1.0
3.0
V
I
D
= 250
µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 12)
R
DS (ON)
0.068
Ω
V
GS
= 10V, I
D
= 12A
0.100
V
GS
= 4.5V, I
D
= 6A
Forward Transconductance (Notes 12 & 13)
g
fs
19.7
S
V
DS
= 15V, I
D
= 12A
Diode Forward Voltage (Note 12)
V
SD
0.98
1.15
V
I
S
= 12A, V
GS
= 0V
Reverse recovery time (Note 13)
t
rr
145
ns
I
S
= 12A, di/dt= 100A/µs
Reverse recovery charge (Note 13)
Q
rr
929
nC
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance
C
iss
502
pF
V
DS
= 30V, V
GS
= 0V
f= 1MHz
Output Capacitance
C
oss
45.7
pF
Reverse Transfer Capacitance
C
rss
27.1
pF
Total Gate Charge
Q
g
5.55
nC
V
GS
= 4.5V
V
DS
= 30V
I
D
= 12A
Total Gate Charge
Q
g
10.3
nC
V
GS
= 10V
Gate-Source Charge
Q
gs
1.6
nC
Gate-Drain Charge
Q
gd
3.5
nC
Turn-On Delay Time (Note 14)
t
D(on)
3.6
ns
V
DD
= 30V, V
GS
= 10V
I
D
= 12A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 14)
t
r
10.8
ns
Turn-Off Delay Time (Note 14)
t
D(off)
11.9
ns
Turn-Off Fall Time (Note 14)
t
f
8.7
ns
Notes:
12. Measured under pulsed conditions. Pulse width
≤ 300µs; duty cycle ≤ 2%
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.