Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN6040SFDE User Manual
Page 2
DMN6040SFDE
D
atasheet number: DS35792 Rev. 8 - 2
2 of 6
August 2012
© Diodes Incorporated
DMN6040SFDE
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.3
4.1
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
6.5
5.1
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
30 A
Maximum Body Diode Continuous Current
I
S
2.5 A
Avalanche Current (Note 7) L = 0.1mH
I
AR
14.2 A
Avalanche Energy (Note 7) L = 0.1mH
E
AR
10 mJ
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.66
W
T
A
= +70°C
0.42
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
189
°C/W
t<10s 132
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.03
W
T
A
= +70°C
1.31
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
61
°C/W
t<10s 43
Thermal Resistance, Junction to Case (Note 6)
R
θJC
9.3
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
60
⎯
⎯
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
100 nA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1
⎯
3 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
30 38
m
Ω
V
GS
= 10V, I
D
= 4.3A
⎯
35 47
V
GS
= 4.5V, I
D
= 4A
Forward Transfer Admittance
|Y
fs
|
⎯
4.5
⎯
S
V
DS
= 10V, I
D
= 4.3A
Diode Forward Voltage
V
SD
⎯
0.7 1.2 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯
1287
⎯
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
57
⎯
Reverse Transfer Capacitance
C
rss
⎯
44
⎯
Gate Resistance
R
G
⎯
1.2
⎯
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 10V)
Q
g
⎯
22.4
⎯
nC
V
DS
= 30V, I
D
= 4.3A
Total Gate Charge (V
GS
= 4.5V)
Q
g
⎯
10.4
⎯
Gate-Source Charge
Q
gs
⎯
4.9
⎯
Gate-Drain Charge
Q
gd
⎯
3.0
⎯
Turn-On Delay Time
t
D(on)
⎯
6.6
⎯
nS
V
GS
= 10V, V
DD
= 30V, R
G
= 6
Ω,
I
D
= 4.3A
Turn-On Rise Time
t
r
⎯
8.1
⎯
Turn-Off Delay Time
t
D(off)
⎯
20.1
⎯
Turn-Off Fall Time
t
f
⎯
4.0
⎯
Body Diode Reverse Recovery Time
t
rr
⎯
18
⎯
nS
I
S
= 4.3A, dI/dt = 100A/
μs
Body Diode Reverse Recovery Charge
Q
rr
⎯
11.9
⎯
nC
I
S
= 4.3A, dI/dt = 100A/
μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.