Diodes DMN601K - Manual (Page 2)

DMN601K
Document number: DS30652 Rev. 8 - 2
2 of 5
www.diodes.com
August 2013
© Diodes Incorporated
DMN601K
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
60 V
Gate-Source Voltage V
GSS
±20 V
Drain Current (Note 5)
Continuous
Pulsed (Note 6)
I
D
300
800
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
350 mW
Thermal Resistance, Junction to Ambient R JA 357 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV DSS
60   V V GS = 0V , I D = 10µA
Zero Gate Voltage Drain Current I
DSS
  1.0 µA V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage I GSS
  ±10 µA V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V GS(th)
1.0 1.6 2.5 V V DS = 10V, I D = 1mA
Static Drain-Source On-Resistance R
DS(ON)

 
 2.0
3.0

V
GS =
10V, I
D
= 0.5A
V
GS
= 5V, I
D
= 0.05A
Forward Transfer Admittance |Y
fs
| 80   ms V
DS
= 10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance C
iss
  50 pF
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz Output Capacitance C
oss
  25 pF
Reverse Transfer Capacitance C rss
  5.0 pF
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width ≤10µS, Duty Cycle ≤1%.
7. Short duration pulse test used to minimize self-heating effect.