Diodes DMN601K User Manual
Dmn601k new prod uc t, Features, Mechanical data
DMN601K
Document number: DS30652 Rev. 8 - 2
1 of 5
August 2013
© Diodes Incorporated
DMN601K
NEW PROD
UC
T
Source
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance: R
DS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case:
SOT23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals:
Finish
Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN601K-7
SOT23
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2005 2006 2007 2008 2009 2010 2011 2011
2012
2013
2014
2015
2016
2017
Code S T U V W X Y Y Z A B C D E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View
Top View
Pin Out Configuration
D
G
S
ESD PROTECTED TO 2kV
K7K = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
e3
Shanghai A/T Site
Chengdu A/T Site
YM
Y
K7K
YM
K7K
YM