Diodes DMN601DMK - Manual (Page 2)

DMN601DMK
Document number: DS30657 Rev. 5 - 2
2 of 5
www.diodes.com
November 2011
© Diodes Incorporated
DMN601DMK
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
60 V
Gate-Source Voltage V GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
510
400
mA
t<10s
T
A
= 25°C
T A = 70°C
I
D
580
470
mA
Continuous Drain Current (Note 5) V GS = 4V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
390
300
mA
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
440
340
mA
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I DM
850 mA
Maximum Body Diode Continuous Current I
S
1.2 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) P
D
0.7 W
Thermal Resistance, Junction to Ambient (Note 4)
Steady state
R θJA
157
°C/W
t<10s 121
Total Power Dissipation (Note 5) P
D
0.98 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
113
°C/W t<10s 88
Thermal Resistance, Junction to Case (Note 5) R θJC 26
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
60 ⎯ ⎯ V V
GS
= 0V, I
D
= 10 μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 1 μA V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±10 μA V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
1.0 1.6 2.5 V V
DS = 10V, I D = 1mA
Static Drain-Source On-Resistance R
DS (ON)
⎯
⎯
⎯
2.4
4.0
Ω
V
GS
= 10V, I
D
= 200mA
V
GS
= 4V, I
D
= 200mA
Forward Transfer Admittance |Y
fs
| 100 ⎯ ⎯ ms V
DS
=10V, I
D
= 200mA
Diode Forward Voltage V
SD
0.5 ⎯ 1.4 V V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C iss
⎯ 30 50 pF
V DS = 25V, V GS = 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 5 25 pF
Reverse Transfer Capacitance C
rss
⎯ 3 5.0 pF
Gate Resistance R
g
⎯ 133 ⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
⎯ 304 ⎯
nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge Q
gs
⎯ 84 ⎯
Gate-Drain Charge Q
gd
⎯ 203 ⎯
Turn-On Delay Time t
D(on)
⎯ 3.9 ⎯
ns
V DS = 30V, I D = 0.2A,
V GS = 10V, R G = 25 Ω, R
L = 150 Ω
Turn-On Rise Time t
r
⎯ 3.4 ⎯
Turn-Off Delay Time t
D(off)
⎯ 15.7 ⎯
Turn-Off Fall Time t f
⎯ 9.9 ⎯
Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
6. Short duration pulse test used to minimize self-heating effect
7. Guaranteed by design. Not subject to production testing