Diodes DMN601DMK User Manual
Dmn601dmk new prod uc t, Product summary, Features and benefits
DMN601DMK
Document number: DS30657 Rev. 5 - 2
1 of 5
November 2011
© Diodes Incorporated
DMN601DMK
NEW PROD
UC
T
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= 25°C
60V
2.4
Ω @ V
GS
= 10V
510mA
4.0
Ω @ V
GS
= 4V
390mA
Features and Benefits
• Low
On-Resistance
•
Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
ESD Protected Up To 2kV
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC
Converters
•
Power management functions
• Analog
Switch
Mechanical Data
• Case:
SOT26
•
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram
• Terminals:
Finish
⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
•
Weight: 0.015 grams (approximate)
Ordering Information
(Note 3)
Part Number
Case
Packaging
DMN601DMK-7
SOT26
3000/Tape & Reel
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our w
3. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2005
2006
2007
2008
2009
2010
2011
2012 2013 2014 2015 2016 2017
Code S T U V W X Y Z A B C D E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT26
Top View
Top View
Internal Schematic
Equivalent Circuit
Per Element
S
1
D
1
D
2
S
2
G
1
G
2
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
K7K = Marking Code
YM = Date Code Marking
Y = Year (ex: S = 2005)
M = Month (ex: 9 = September)
ESD PROTECTED TO 2kV
K7K YM
K7K Y
M