Dmn5l06dwk new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMN5L06DWK User Manual
Page 2: Electrical characteristics
DMN5L06DWK
Document number: DS30930 Rev. 5 - 2
2 of 6
September 2011
© Diodes Incorporated
DMN5L06DWK
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Drain Source Voltage
V
DSS
50 V
Gate-Source Voltage
V
GSS
±20
V
Drain Current (Note 4)
Continuous
Pulsed (Note 5)
I
D
305
800
mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Total Power Dissipation (Note 4)
P
D
250 mW
Thermal Resistance, Junction to Ambient
R
θJA
500
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
50
⎯
⎯
V
V
GS
= 0V, I
D
= 10
μA
Zero Gate Voltage Drain Current
@ T
C
= 25°C
I
DSS
⎯
⎯
60 nA
V
DS
= 50V, V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯
⎯
1
500
50
μA
nA
nA
V
GS
= ±12V, V
DS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.49
⎯
1.0 V
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
⎯
⎯
⎯
⎯
3.0
2.5
2.0
Ω
V
GS
= 1.8V, I
D
= 50mA
V
GS
= 2.5V, I
D
= 50mA
V
GS
= 5.0V, I
D
= 50mA
On-State Drain Current
I
D(ON)
0.5 1.4
⎯
A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
|Y
fs
|
200
⎯
⎯
mS
V
DS
=10V, I
D
= 0.2A
Source-Drain Diode Forward Voltage
V
SD
0.5
⎯
1.4 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
⎯
50 pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
⎯
25 pF
Reverse Transfer Capacitance
C
rss
⎯
⎯
5.0 pF
Notes:
4. Device mounted on FR-4 PCB.
5. Pulse width
≤10μS, Duty Cycle ≤1%.
6. Short duration pulse test used to minimize self-heating effect.