Diodes DMN5L06DWK User Manual
Dmn5l06dwk new prod uc t, Features, Mechanical data
DMN5L06DWK
Document number: DS30930 Rev. 5 - 2
1 of 6
September 2011
© Diodes Incorporated
DMN5L06DWK
NEW PROD
UC
T
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Dual
N-Channel
MOSFET
•
Low On-Resistance (1.0V max)
•
Very Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Ultra-Small Surface Mount Package
•
ESD Protected up to 2kV
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
•
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case:
SOT363
•
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram
•
Terminals: Finish – Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
•
Weight: 0.006 grams (approximate)
Ordering Information
(Note 3)
Part Number
Case
Packaging
DMN5L06DWK-7
SOT363
3000/Tape & Reel
Notes:
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our w
3. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2006
2007
2008
2009
2010
2011
2012
Code
T
U
V
W X Y Z
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1 2 3 4 5 6 7 8 9 O N D
SOT363
Top View
Top View
Internal Schematic
DAB = Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
ESD PROTECTED TO 2kV
S
1
D
1
D
2
S
2
G
1
G
2
DAB YM
DAB
YM