Diodes DMN55D0UT - Manual (Page 4)

DMN55D0UT
Document number: DS31330 Rev. 5 - 2
4 of 5
www.diodes.com
December 2012
© Diodes Incorporated
DMN55D0UT
NEW PROD
UC
T
V
,
G
A
T
E
T
HRESH
O
L
D V
O
L
T
AG
E (
V
)
GS
(T
H
)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.5
0.6
0.7
0.8
0.9
1.0
1.1
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
Fig. 8 Diode Forward Voltage vs. Current
0.0001
0.001
0.01
0.1
1
0.1 0.3 0.5 0.7 0.9 1.1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.001
0.01
0.1
1
100
r(t),
T
R
ANSI
EN
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
Fig. 9 Transient Thermal Response
0.00001 0.0001 0.001 0.01 0.1 1 10
t , PULSE DURATION TIME (s)
1
0.000001
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * R
R = 625°C/W
θ θ
θ
JA JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SOT523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D ⎯ ⎯ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
α 0° 8° ⎯
All Dimensions in mm
A
M
J
L D
B C
H
K
G
N