Dmn55d0ut new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMN55D0UT User Manual
Page 2: Electrical characteristics
DMN55D0UT
Document number: DS31330 Rev. 5 - 2
2 of 5
December 2012
© Diodes Incorporated
DMN55D0UT
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
50 V
Gate-Source Voltage
V
GSS
±12
V
Drain Current (Note 5) Continuous
I
D
160 mA
Pulsed Drain Current (Note 5)
I
DM
560 mA
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
200 mW
Thermal Resistance, Junction to Ambient
R
θJA
625
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
50
⎯
⎯
V
V
GS
= 0V, I
D
= 250
μA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
1
μA V
DS
= 50V, V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯
⎯
1.0
5.0
μA
V
GS
=
±8V, V
DS
= 0V
V
GS
=
±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.7 0.8 1.0 V V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
3.1 4 Ω V
GS
= 4V, I
D
= 100mA
⎯
4 5
V
GS
= 2.5V, I
D
= 80mA
Forward Transconductance
g
FS
180
⎯
⎯
mS V
DS
= 10V, I
D
= 100mA, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
25
⎯
pF
V
DS
= 10V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
⎯
5
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
2.1
⎯
pF
Notes:
5. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
6. Short duration pulse test used to minimize self-heating effect.