Diodes DMN4010LK3 User Manual
Page 4
POWERDI is a registered trademark of Diodes Incorporated.
DMN4010LK3
Document number: DS36743 Rev. 2 - 2
4 of 6
February 2014
© Diodes Incorporated
DMN4010LK3
NEW PROD
UC
T
0
0.005
0.01
0.015
0.02
0.025
0.03
-50
-25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
TA
N
C
E (
)
DS
(O
N)
Ω
V
= 4.5V
I = 11A
GS
D
V
=
V
I = 14A
GS
D
10
0.8
1.1
1.4
1.7
2
2.3
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
I = 1mA
D
I = 250µA
D
V
, GA
T
E
T
HRE
S
H
OL
D V
O
LT
A
G
E
(V
)
GS
(t
h
)
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
C
iss
C
oss
C
rss
f = 1MHz
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
Q
(nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
V
= 20V
I =
A
DS
D
14
0.01
0.1
1
10
100
1000
0.1
1
10
100
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T
= 150°C
T = 25°C
J(max)
A
V
= 10V
Single Pulse
GS
DUT on 1 * MRP Board