Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN4010LK3 User Manual
Page 2
POWERDI is a registered trademark of Diodes Incorporated.
DMN4010LK3
Document number: DS36743 Rev. 2 - 2
2 of 6
February 2014
© Diodes Incorporated
DMN4010LK3
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
40 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
C
= +25°C
T
C
= +70°C
I
D
39
31
A
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
11.9
9.5
A
Maximum Body Diode Forward Current (Note 6)
I
S
2 A
Pulsed Drain Current (10µs pulse, Duty cycle = 1%)
I
DM
80 A
Avalanche Current (Notes 7) L = 0.1mH
I
AS
27 A
Avalanche Energy (Notes 7) L = 0.1mH
E
AS
37 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
1.6 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
78
°C/W
t<10s 31
Total Power Dissipation (Note 6)
P
D
2.4 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
51
°C/W
t<10s 21
Thermal Resistance, Junction to Case (Note 6)
R
θJC
4.7
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
40 — — V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
— — 1 µA
V
DS
= 32V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.0 — 3.0 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
— 8.7 11.5
mΩ
V
GS
= 10V, I
D
= 14A
11.1
14.5
V
GS
= 4.5V, I
D
= 11A
Diode Forward Voltage
V
SD
— 0.72 — V
V
GS
= 0V, I
S
= 14A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
—
1810
—
pF
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
135
—
pF
Reverse Transfer Capacitance
C
rss
—
112
—
pF
Gate Resistance
R
g
— 1.7 — Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
— 17 — nC
V
DS
= 20V, ,
I
D
= 14A
Total Gate Charge (V
GS
= 10V)
Q
g
— 37 — nC
Gate-Source Charge
Q
gs
— 5.6 — nC
Gate-Drain Charge
Q
gd
— 7.1 — nC
Turn-On Delay Time
t
D(on)
—
5.1
— ns
V
GS
= 10V, V
DS
= 20V,
R
G
= 6Ω, I
D
= 14A
Turn-On Rise Time
t
r
—
13
— ns
Turn-Off Delay Time
t
D(off)
—
36
— ns
Turn-Off Fall Time
t
f
—
13
— ns
Body Diode Reverse Recovery Time
t
rr
— 12.2 — ns
I
S
= 3A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Q
rr
— 5.4 — nC
I
S
= 3A, dI/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.