Dmn4010lfg – Diodes DMN4010LFG User Manual
Page 5
POWERDI is a registered trademark of Diodes Incorporated
DMN4010LFG
Document number: DS36764 Rev. 1 - 2
5 of 7
April 2014
© Diodes Incorporated
DMN4010LFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F)
T
C
iss
C
oss
C
rss
f = 1MHz
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
Q
(nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
V
= 20V
I =
A
DS
D
14
0.01
0.1
1
10
100
1000
0.1
1
10
100
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T
= 150°C
T = 25°C
J(max)
A
V
= 10V
Single Pulse
GS
DUT on 1 * MRP Board
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
r(t),
T
R
AN
S
IEN
T
T
H
E
R
MA
L
R
ES
IS
TAN
C
E
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = Single Pulse
R
(t) = r(t) * R
R
= 72°C/W
Duty Cycle, D = t1/ t2
θ
θ
θ
JA
JA
JA
D = 0.005