Electrical characteristics, Dmn4010lfg – Diodes DMN4010LFG User Manual
Page 3
POWERDI is a registered trademark of Diodes Incorporated
DMN4010LFG
Document number: DS36764 Rev. 1 - 2
3 of 7
April 2014
© Diodes Incorporated
DMN4010LFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
40 — — V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
— — 1 µA
V
DS
= 32V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.0 — 3.0 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
— — 12
mΩ
V
GS
= 10V, I
D
= 14A
—
15
V
GS
= 4.5V, I
D
= 11A
Diode Forward Voltage
V
SD
— 0.72 — V
V
GS
= 0V, I
S
= 14A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
—
1810
—
pF
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
135
—
pF
Reverse Transfer Capacitance
C
rss
—
112
—
pF
Gate Resistance
R
g
— 1.7 — Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
— 17 — nC
V
DS
= 20V, I
D
= 14A
Total Gate Charge (V
GS
= 10V)
Q
g
— 37 — nC
Gate-Source Charge
Q
gs
— 5.6 — nC
Gate-Drain Charge
Q
gd
— 7.1 — nC
Turn-On Delay Time
t
D(on)
—
5.1
— ns
V
GS
= 10V, V
DS
= 20V,
R
G
= 6Ω, I
D
= 14A
Turn-On Rise Time
t
r
—
13
— ns
Turn-Off Delay Time
t
D(off)
—
36
— ns
Turn-Off Fall Time
t
f
—
13
— ns
Body Diode Reverse Recovery Time
t
rr
—
12.2 —
nS
I
F
= 3A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
Q
rr
—
5.4 —
nC
I
F
= 3A, di/dt = 100A/μs
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0
0.5
1
1.5
2
2.5
3
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
V
= 2.5V
GS
V
= 3.0V
GS
V
= 3.5V
GS
V
= 4.5V
GS
V
= 10V
GS
V
= 4.0V
GS
0
5
10
15
20
25
30
1
1.5
2
2.5
3
3.5
4
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I,
D
R
AI
N
C
U
R
R
EN
T
(A)
D
V
= 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A