Diodes DMG1026UV - Manual (Page 4)

DMG1026UV
Document number: DS35068 Rev. 6 - 2
4 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMG1026UV
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Figure 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE T
H
R
ESHO
L
D VO
LT
AG
E
(V
)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
0
200
400
600
800
1,000
0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(mA
)
S
T = 25°C
A
1
10
100
0 5 10 15 20 25 30 35 40
Figure 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
, C
A
P
A
C
IT
AN
C
E (
pF
)
f = 1MHz
C
iss
C
rss
C
oss
0 5 10 15 20 25 30 35 40 45 50
Figure 10 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
I,
L
E
A
K
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 0.2 0.4 0.6 0.8 1.0 1.2
Q (nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
0
2
4
6
8
10
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
V = 15V
I = A
DS
D
800m
0.001
0.01
0.1
1
10
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ