Diodes DMB54D0UV User Manual
Dmb54d0uv, Features, Mechanical data
DMB54D0UV
Document number: DS31676 Rev. 5 - 2
1 of 7
March 2012
© Diodes Incorporated
DMB54D0UV
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR
Features
•
N-Channel MOSFET and PNP Transistor in One Package
• Low
On-Resistance
•
Very Low Gate Threshold Voltage, 1.0V max
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Ultra-Small Surface Mount Package
•
ESD Protected MOSFET Gate up to 2kV
•
Lead, Halogen and Antimony Free, RoHS Compliant (Note
1
)
•
"Green" Device (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
SOT563
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram
•
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.006 grams (approximate)
Ordering Information
(Note 3)
Part Number
Case
Packaging
DMB54D0UV-7
SOT563
3,000/Tape & Reel
DMB54D0UV-13
SOT563
10,000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.’s “Green” policy can be found on our w
3. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2008
2009
2010
2011
2012
2013
2014
2015 2016 2017
Code V W X Y Z A B C D E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT563
Top View
Top View
Internal Schematic
Bottom View
E
D
2
S
2
Q
1
G
2
Q
2
B
C
MB2 = Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
M 2
B
YM
ESD PROTECTED TO 2kV