Diodes DMS3014SFG - Manual (Page 4)

POWERDI is a registered trademark of Diodes Incorporated
DMS3014SFG
Document number: DS35594 Rev. 6 - 2
4 of 8
www.diodes.com
May 2012
© Diodes Incorporated
DMS3014SFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
Electrical Characteristics
T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current I
DSS
- - 100 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.0 - 2.2 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
- 9 13
m Ω
V
GS
= 10V, I
D
= 10.4A
- 10 14 V GS = 4.5V, I D = 10.4A
Forward Transfer Admittance |Y
fs
| - 23 - S V
DS
= 5V, I
D
= 10.4A
Diode Forward Voltage V
SD
- 0.4 0.55 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
- 2296 4310 pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 164 - pF
Reverse Transfer Capacitance C rss
- 120 - pF
Gate Resistance R
g
0.26 1.3 2.34 Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge V
GS
= 4.5V Q
g
- 19.3 - nC
V
DS
= 15V, V
GS
= 10V, I
D
= 10.4A
Total Gate Charge V
GS
= 10V Q
g
- 45.7 - nC
Gate-Source Charge Q
gs
- 5.0 - nC
Gate-Drain Charge Q
gd
- 2.9 - nC
Turn-On Delay Time t
D(on)
- 5.5 - ns
V
GS
= 10V, V
DS
= 15V,
R
G
= 3 Ω, R
L
= 1.2 Ω
Turn-On Rise Time t r
- 24.4 - ns
Turn-Off Delay Time t
D(off)
- 33.1 - ns
Turn-Off Fall Time t
f
- 6.6 - ns
Reverse Recovery Time t rr
- 12.9 - ns I F = 13A, di/dt = 500A/ μs
Reverse Recovery Charge Q
rr
- 8.0 - nC I
F
= 13A, di/dt = 500A/ μs
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
0
10
15
20
25
30
0 0.5 1 1.5 2
Fig. 4 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
V = 2.0V
GS
V = 2.2V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 3.5V
GS
V = 4.5V
GS
V = 4.0V
GS
5
Fig. 5 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
0 1 1.5 2 2.5 3
V = 85°C
GS
V = 125°C
GS
V = 25°C
GS
V = -55°C
GS
V = 150°C
GS
V = 5V
DS
0.5
0
5
10
15
20
25
30
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D